features trenchfet power mosfet esd protected: 2500 v applications battery and load switching - notebook SI4441EDY vishay siliconix new product document number: 72133 s-03597?rev. a, 31-mar-03 www.vishay.com 1 p-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) - 30 0.016 @ v gs = - 10 v - 10.6 - 30 0.026 @ v gs = - 4.5 v - 8.3 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 s g d p-channel mosfet ordering information: SI4441EDY SI4441EDY-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d - 10.6 - 8.1 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d - 8.5 - 6.5 a pulsed drain current i dm -40 a continuous source current (diode conduction) a i s - 2.1 - 1.3 maximum power dissipation a t a = 25 c p d 2.5 1.5 w maximum power dissipation a t a = 70 c p d 1.6 0.9 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 37 50 maximum junction-to-ambient a steady state r thja 70 85 c/w maximum junction-to-foot (drain) steady state r thjf 16 20 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI4441EDY vishay siliconix new product www.vishay.com 2 document number: 72133 s-03597?rev. a, 31-mar-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 - 3.0 v gate body leakage i gss v ds = 0 v, v gs = 10 v 20 a gate-body leakage i gss v ds = 0 v, v gs = 20 v 1 ma zero gate voltage drain current i dss v ds = - 24 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 24 v, v gs = 0 v, t j = 55 c -5 a on-state drain current a i d(on) v ds -5 v, v gs = - 10 v -40 a drain source on state resistance a r ds( ) v gs = - 10 v, i d = - 10.6 a 0.013 0.016 drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 8.3 a 0.020 0.026 forward transconductance a g fs v ds = - 15 v, i d = - 10.6 a 43 s diode forward voltage a v sd i s = - 2.1 a, v gs = 0 v - 0.8 - 1.2 v dynamic b total gate charge q g 45.5 70 gate-source charge q gs v ds = - 15 v, v gs = - 10 v, i d = - 10.6 a 6.5 nc gate-drain charge q gd 12.5 turn-on delay time t d(on) 5 8 rise time t r v dd = - 15 v, r l = 15 11 20 s turn-off delay time t d(off) v dd = - 15 v , r l = 15 i d - 1 a, v gen = - 10 v, r g = 6 45 70 s fall time t f 35 55 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 30 0 5 152025 10 0.0001 100 10,000 gate current vs. gate?source voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 gate?current vs. gate?source voltage v gs - gate-to-source voltage (v) 0.1 1 10 1,000 v gs - gate-to-source voltage (v) - gate current ( i gss a) t j = 25 c t j = 150 c - gate current (ma) i gss 0.01 0.001
SI4441EDY vishay siliconix new product document number: 72133 s-03597?rev. a, 31-mar-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 8 16 24 32 40 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 0 1020304050 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 thru 5 v 25 cx t c = 125 c v ds = 15 v i d = 10.6 a v gs = 10 v i d = 10.6 a v gs = 10 v -55 c 3 v output characteristics transfer characteristics gate charge on?resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) v gs - on-resistance ( r ds(on) ) i d - drain current (a) on?resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 4.5 v 4 v
SI4441EDY vishay siliconix new product www.vishay.com 4 document number: 72133 s-03597?rev. a, 31-mar-03 typical characteristics (25 c unless noted) - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.4 0.00 0.02 0.04 0.06 0.08 0.10 0246810 1 10 40 i d = 10.6 a 0 0.4 0.6 0.8 t j = 25 c t j = 150 c threshold voltage variance (v) v gs(th) t j - temperature ( c) source?drain diode forward v oltage on?resistance vs. gate?to?sour ce voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s 0 20 80 power (w) single pulse power, junction-to-ambient time (sec) 40 60 1 1000 10 10 -1 10 -2 0.2 1.2 100 safe operating area v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse - drain current (a) i d p(t) = 10 dc 0.1 i dm limited i d(on) limited r ds(on) limited bv dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001
SI4441EDY vishay siliconix new product document number: 72133 s-03597?rev. a, 31-mar-03 www.vishay.com 5 typical characteristics (25 c unless noted) 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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